Unoccupied electronic states of ultrathin phenolphthalein films on the ZnO surface formed by atomic layer deposition

The results of a study the unoccupied electronic states ultrathin films phenolphthalein molecules on ZnO surface formed by atomic layer deposition technique are presented. composition was determined X-ray photoelectron spectroscopy (XPS) and its crystallinity characterized using diffraction. predominance content O atoms 5-10%, compared with Zn atoms, found. characteristics ZnO/phenolphthalein structure were studied total current (TCS) in energy range from 5 eV to 20 above E F during thermal vacuum up 8 nm thick. Phenolphthalein contain two hydroxyl functional groups. TCS obtained that represent backbone without fine maxima located can be associated boundaries π * bands states. work function ALD method 4.2±0.1 eV. film led decrease 0.1 Keywords: Phenolphthalein, films, ZnO, deposition, properties, low-energy electron spectroscopy, diffraction, spectroscopy.